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Switzerland-Ag-Ag Azienda Directories
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Azienda News:
- (PDF) Design Strategies of 40 nm Split-Gate NOR Flash Memory . . .
In split-gate NOR flash, significant factors that can cause CIM inference accuracy drop are the device conductance variation, caused by floating gate charge variation, and a low on-off
- Design Optimization Of Split-Gate NOR Flash For Compute-In-Memory
In split-gate NOR flash, significant factors that can cause CIM inference accuracy drop are the device conductance variation, caused by floating gate charge variation, and a low on-off current ratio Conductance variation generally has a trade-off relationship with the on-current, which greatly affects CIM dynamic power consumption
- Design Strategies of 40 nm Split-Gate NOR Flash Memory Device . . .
Key factors at the device level that can impact the inference accuracy of CIM include the device conductance variation, due to the floating-gate charge variation, and the on off ratio The cell design was modeled with reference to 40 nm ESF3-embedded com-mercial NOR flash memory technology from Silicon Storage Technology (SST Inc) [20,21]
- Design Strategies of 40 nm Split-Gate NOR Flash Memory Device . . .
To achieve high energy efficiency and high accuracy in CIM inference chips, it is necessary to optimize device design by targeting low power consumption at the device level and surpassing baseline accuracy at the system level In split-gate NOR flash, significant factors that can cause CIM inference accuracy drop are the device conductance
- Method of determining coupling ratios in a split-gate flash . . .
A method of determining a coupling ratio of a split-gate memory cell includes initializing the cell, placing the cell in a reverse operation mode, sweeping a control gate voltage of the
- Understanding MSP430 Flash Data Retention (Rev. A)
In this application report, emphasis is given to basics of flash data retention, factors that influence this parameter, and the various figures of merit to interpret flash data retention, along with tips to prevent failures on MSP430 MCUs
- Fabrication and optimization of aggressively scaled Dual-Bit . . .
An aggressively scaled triple self-aligned split-gate floating-gate (FG) NOR-type Dual-bit cell (NORD) flash cell was studied and fabricated at 55-nm node technology Both FG- and selected-gate (SG-) length, for the first time, were scaled down to sub-80 nm and sub-60 nm in NORD flash, respectively
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