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France-Je-Je Azienda Directories
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Azienda News:
- Helium release and diffusion mechanism in SiC containing B4C
Diffusion constant (closed symbols) and activation energy of helium diffusion (open symbols) in neutron-irradiated SiC containing B 4 C of different 10 B concentrations, at 750–1060 °C
- (PDF) Experimental determination of intragranular helium diffusion . . .
In this study, the diffusion characteristics of ion-implanted He in B4C (500 keV, fluences from 1 x 10⁺¹³ to 2 x 10⁺¹⁵ He cm⁻²) were investigated mainly by Thermo-Desorption Spectroscopy (TDS)
- Helium apparent diffusion coefficient and trapping mechanisms in . . .
Results presented in this paper contribute to a better understanding of helium diffusion in B4C and of the influence of the initial microstructure They are complementary of results dealing with helium cluster nucleation and growth [15]
- Helium release and diffusion mechanism in SiC containing B 4C
An increased number of defects in SiC containing higher 10 B concentration is thought to cause the lower rate of helium diffusion due to increased helium trapping
- Helium release and diffusion mechanism in Si C containing B4C
Diffusion des atomes excités dans les mélanges de gaz rares avec l'hélium - Interaction of Ne (3s), Ar (4s), Kr (5s), Xe (6s) with He
- Helium behavior in implanted B4C boron carbide - 15418
The neutron absorption reactions on the 10B isotope lead to the formation of high quantities of helium, which result to swelling and micro-cracks induced by the formation of high pressure bubbles The first steps of the formation of these clusters and the diffusion of the gas are not well known
- Helium release and diffusion mechanism in SiC containing B4C of . . .
Semantic Scholar extracted view of "Helium release and diffusion mechanism in SiC containing B4C of different 10B concentrations" by T Yano et al
- Helium apparent diffusion coefficient and trapping mechanisms in . . .
In a recent paper, we have identified the trapping sites for helium, grain boundaries and damaged zones In this paper, we propose the determination of an apparent diffusion coefficient for helium 3 He implantations then annealing were performed in B 4C samples of different grain sizes
- Helium apparent diffusion coefficient and trapping mechanisms in . . .
In a recent paper, we have identified the trapping sites for helium, grain boundaries and damaged zones In this paper, we propose the determination of an apparent diffusion coefficient for helium 3He implantations then annealing were performed in B4C samples of different grain sizes
- Helium apparent diffusion coefficient and trapping mechanisms in . . .
In a recent paper, we have identified the trapping sites for helium, grain boundaries and damaged zones In this paper, we propose the determination of an apparent diffusion coefficient for helium 3 He implantations then annealing were performed in B4C samples of different grain sizes
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