Single digit parts-per-billion NOx detection using MoS2 hBN transistors . . . In this paper, we employ high quality hBN as a substrate for our mechanically exfoliated MoS2 devices and demonstrate sensitivity down to at least 6 ppb for NO x detection at room temperature through a systematic optimization of the device parameters and operating conditions
(PDF) Single digit parts-per-billion NOx detection using MoS2 hBN . . . Abstract 2D materials offer excellent possibilities for high performance gas detection due to their high surfaceto-volume ratio, high surface activities, tunable electronic properties and dramatic change in resistivity upon molecular adsorption
Single digit parts-per-billion NOx detection using MoS2 hBN transistors This article reports on chemical sensing of nitrogen dioxide (NO2) using field-effect transistors based on multilayer black phosphorus and sheds light on important electronic and sensing characteristics of black phosphorus, which can be utilized in future studies and applications
Revealing a Highly Sensitive Sub-ppb-Level NO - PubMed In this work, we use a chemical method to design novel 2D-material 0D-quantum dot (MoS 2 SnS) heterostructures Furthermore, the unique 2D 0D heterostructure enhanced the NO 2 gas-sensing capability 3 times and increased the sensing recoverability by more than 90%