|
Canada-0-STORAGE Azienda Directories
|
Azienda News:
- IMZC120R012M2H - Silicon carbide MOSFET discretes | Infineon Technologies
IMZC120R012M2H CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package Data Sheet package
- IMZC120R012M2H - 碳化硅 MOSFET 单管 | Infineon英飞凌官网
PLECS Models for CoolSiC™ 1400 V SiC MOSFET G2 Series Request for PSpice LTspice Simulation Model – IMZC120R012M2H CoolSiC MOSFET and IMYH200R100M1H CoolSiC MOSFET
- IMZC120R012M2H Datasheet (PDF) - Infineon Technologies AG
Part #: IMZC120R012M2H Download File Size: 1MbKbytes Page: 17 Pages Description: CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with XT interconnection technology Manufacturer: Infineon Technologies AG
- IMZC120R012M2HXKSA1 Infineon Technologies | Discrete Semiconductor . . .
Order today, ships today IMZC120R012M2HXKSA1 – N-Channel 1200 V 129A (Tc) 480W (Tc) Through Hole PG-TO247-4-17 from Infineon Technologies Pricing and Availability on millions of electronic components from Digi-Key Electronics
- IMZC120R012M2H Datasheet | Infineon
IMZC120R012M2H 1200V SiC MOSFET datasheet by Infineon View pinout, features, specifications
- IMZC120R012M2HXKSA1 Infineon Technologies | Mouser
IMZC120R012M2HXKSA1 Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 12 mohm G2 datasheet, inventory, pricing
- IMZC120R012M2HXKSA1 Infineon Technologies | 分立 . . .
当天下单,当天发货。来自 Infineon Technologies 的 IMZC120R012M2HXKSA1 – 通孔 N 通道 1200 V 129A(Tc) 480W(Tc) PG-TO247-4-17。DigiKey 提供数以百万计电子元器件的定价和供应信息。
- IMZC120R012M2H 数据表 (PDF) - Infineon Technologies AG
IMZC120R012M2H 产品详情 Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 91 A at TC = 100°C • RDS (on) = 12 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 μs • Benchmark gate threshold voltage, VGS (th) = 4 2 V
- IMZC120R012M2HXKSA1 Infineon Technologies | Mouser
IMZC120R012M2HXKSA1 Infineon Technologies 碳化硅MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2 数据表, 库存, 价格 英飞凌CoolSiC™ 1200V G2碳化矽MOSFET为电力电子设备应用提供高性能解决方案。这些MOSFET具有出色的电气特性,且开关损耗极低,可实现高效运行。该1200V G2 MOSFET设计适合过载条件,支持温度高达200°C的工作
- IMZC120R012M2H - CHANGRUN INT
IMZC120R012M2H SKU : 4b47081417fa $ 28 75 ID (@25°C)max:,VDS max:1200 V,RDS (on) (@10V) max:
|
|